| PART |
Description |
Maker |
| AXX49T |
Quartz Crystal Unit HC-49/U with reduced height
|
Advanced XTAL Products
|
| 0462350001 46235-0001 |
Micro-Fit 3.0 Reduced Mating Force, Crimp Terminal, Female, with 0.38um (15u") Selective Gold (Au)
Micro-Fit 3.0 Reduced Mating Force, Crimp Terminal, Female, with 0.38um (15u) Selective Gold (Au)
|
Molex Electronics Ltd.
|
| DG3001-T1 DG3002-T1 DG3003-T1 DG3000-T1 70754 |
Rectangular LED Lamp,Green,Diffused,LED-6a
MICRO FOOT 3x2: 0.5-mm PITCH 0.165-mm BUMP HEIGHT
MICRO FOOT 3x2: 0.5-mm PITCH, 0.165-mm BUMP HEIGHT
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SP6831EK SP6831EK_TR SP6831TR SP6830 SP6830EK SP68 |
Low Power Voltage Inverters With Shutdown
CONNECTOR, BATTERY, 5WAY; Depth, external:2.4mm; Length / Height, external:5mm; Width, external:5mm; Cells, No. of:1; Connector type:MOBO Reduced Size Battery Connector; Current rating:3A; Life, mechanical:5000 Cycles; Pitch, RoHS Compliant: Yes
|
SIPEX[Sipex Corporation]
|
| T528W337M2R5ATE009 |
Tantalum, Polymer Tantalum, Reduced Volume, T528, 330 uF, 20%, 2.5 V, 7343, SMD, Polymer, Low ESR, NonCombustible, Face Down, 9 mOhms, Height Max = 1.5mm
|
Kemet Corporation
|
| NB2879ASNR2 NB2879ASNR2G NB2879A |
Low Power, Reduced EMI Clock Synthesizer
|
ONSEMI[ON Semiconductor]
|
| DTP4N60F DTP4N6013 |
Power MOSFET Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
| NB2869ASNR2G NB2869ASNR2 NB2869A |
Low Power, Reduced EMI Clock Synthesizer(低功降低EMI时钟合成
|
ONSEMI[ON Semiconductor]
|
| AS1720 AS1720A AS1720B |
Solenoid / Valve Dr iver wi th Cur rent Limi tat ion
|
austriamicrosystems AG
|
| 1N4942 1N4946 1N4947 |
VOLTAGE RANGE 200 TO 1000 VOLTS CUR RENT 1.0 AMPERE
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
